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this is information on a product in full production. march 2013 docid023839 rev 3 1/18 18 std80n4f6, STU80N4F6 n-channel 40 v, 5.5 m typ., 80 a stripfet? vi deepgate? power mosfet in dpak and ipak packages datasheet ? production data figure 1. internal schematic diagram features ? low gate charge ? very low on-resistance ? high avalanche ruggedness applications ? switching applications description these devices are n-channel power mosfets developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfets exhibits the lowest r ds(on) in all packages. !-v $4!" ' 3 1 3 tab dpak ipak 3 2 1 ta b order codes v ds r ds(on) max i d std80n4f6 40 v 6.0 m 80 a STU80N4F6 6.3 m table 1. device summary order codes marking package packaging std80n4f6 80n4f6 dpak tape and reel STU80N4F6 ipak tube www.st.com
contents std80n4f6, STU80N4F6 2/18 docid023839 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid023839 rev 3 3/18 std80n4f6, STU80N4F6 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 40 v v gs gate-source voltage 20 v i d (1) drain current (continuous) at t c = 25 c 80 (1) 1. current limited by package. a i d (1) drain current (continuous) at t c = 100 c 56 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 (1) a p tot total dissipation at t c = 25 c 70 w i av avalanche current, repetitive or not-repetitive (pulse width limited by t jmax ) 40 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 25 v) 149 mj derating factor 0.47 w/c t stg storage temperature -55 to 175 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit dpak ipak r thj-case thermal resistance junction-case max 2.14 c/w r thj-amb thermal resistance junction-ambient max 100 c/w r thj-pcb (1) 1. when mounted on fr-4 board of inch 2 , 2 oz cu thermal resistance junction-ambient max 50 c/w
electrical characteristics std80n4f6, STU80N4F6 4/18 docid023839 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = 40 v v ds = 40 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 40 a for dpak for ipak 5.5 5.8 6 6.3 m m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 2150 - pf c oss output capacitance - 335 - pf c rss reverse transfer capacitance - 160 - pf q g total gate charge v dd = 20 v, i d = 80 a, v gs = 10 v (see figure 14 ) -36-nc q gs gate-source charge - 11 - nc q gd gate-drain charge - 9 - nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 20 v, i d = 40 a, r g = 4.7 , v gs = 10 v (see figure 15 ) - 10.5 - ns t r rise time - 7.6 - ns t d (off) turn-off delay time - 46.1 - ns t f fall time - 11.9 - ns
docid023839 rev 3 5/18 std80n4f6, STU80N4F6 electrical characteristics table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 80 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 320 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 - 1.3 v t rr reverse recovery time i sd = 80 a, di/dt = 100 a/s v dd = 32 v (see figure 17 ) -41.1 ns q rr reverse recovery charge - 43.6 nc i rrm reverse recovery current - 2.1 a
electrical characteristics std80n4f6, STU80N4F6 6/18 docid023839 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 1m s 100 s tj=175c tc=25c s ingle p u l s e 100 am15599v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 150 100 50 0 0 4 v d s (v) (a) 2 200 v g s = 4 v v g s = 5 v v g s = 6 v v g s = 7, 8 , 9, 10 v am15600v1 i d 60 40 20 0 2 4 v g s (v) 6 (a) 3 5 7 8 0 100 8 v d s = 2 v 120 140 9 10 1 8 0 am15601v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =20v i d = 8 0a 12 am15602v1 r d s (on) 5.5 5 4.5 4 0 40 i d (a) (m ) 20 60 6 6.5 8 0 dpak ipak v g s = 10v am1560 3 v1
docid023839 rev 3 7/18 std80n4f6, STU80N4F6 electrical characteristics figure 8. capacitance variations figure 9. drain-source diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature c 1500 1000 500 0 0 20 v d s (v) (pf) 10 3 0 ci ss co ss cr ss 40 2000 2500 am15 3 52v1 v s d 0 40 i s d (a) (v) 20 60 8 0 0 0.2 0.4 0.6 0. 8 1.0 t j =-50c t j =150c t j =25c am15604v1 v g s (th) 0.6 0.4 0.2 0 -75 -25 t j (c) (norm) -50 0. 8 50 0 25 75 100 1 i d =250 a 125 1.2 am15 3 54v1 r d s (on) 1.5 1 0 t j (c) (norm) 0.5 i d =40a v g s =10v -75 0 -50 75 -25 50 100 25 125 2 150 am15 3 56v1 v d s -75 0 t j (c) (norm) -50 75 -25 50 100 0.6 0.7 0. 8 0.9 1 1.1 i d = 1ma 25 125 1.2 1. 3 150 am15 3 5 3 v1
test circuits std80n4f6, STU80N4F6 8/18 docid023839 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
docid023839 rev 3 9/18 std80n4f6, STU80N4F6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
package mechanical data std80n4f6, STU80N4F6 10/18 docid023839 rev 3 table 8. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid023839 rev 3 11/18 std80n4f6, STU80N4F6 package mechanical data figure 19. dpak (to-252) drawing 006 8 772_k
package mechanical data std80n4f6, STU80N4F6 12/18 docid023839 rev 3 figure 20. dpak footprint (a) a. all dimensions are in millimeters footprint_rev_k
docid023839 rev 3 13/18 std80n4f6, STU80N4F6 package mechanical data table 9. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
package mechanical data std80n4f6, STU80N4F6 14/18 docid023839 rev 3 figure 21. ipak (to-251) drawing 006 8 771_k
docid023839 rev 3 15/18 std80n4f6, STU80N4F6 packaging mechanical data 5 packaging mechanical data table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1.65 1.85n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0.35 w15.7 16.3
packaging mechanical data std80n4f6, STU80N4F6 16/18 docid023839 rev 3 figure 22. tape for dpak (to-252) figure 23. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
docid023839 rev 3 17/18 std80n4f6, STU80N4F6 revision history 6 revision history table 11. document revision history date revision changes 26-oct-2012 1 initial release. 01-mar-2013 2 ? added: ipak package ? the part number sti80n4f6 has been moved to a separate datasheet ? added: figure 2 , 3 , 4 , 5 , 6 , 7 and 9 05-mar-2013 3 ? minor text changes ? modified: table 3
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